SiMF MEMS High-Pass Filter

1.Based on MEMS process 2.Frequency Range: 5GHz ~ 90GHz 3.Perfect Temperature Stability 4.Small Size 5.High Rejection

DescriptionSiMF MEMS High-pass Filter provides the advantage of small size, low consumption, high rejection ratio, wide operation temperature range and perfect consistency. SiMF MEMS filter chip is based on a pair of high resistively silicon wafer AU-AU bonding. The inside cavity is formed by DRIE etching. Both top and bottom surface are metalized with gold for grounding. The I/O port is fed by CPW line.

ApplicationsRadar, Microwave Communication, Electronic Systems, Microwave Apparatus and Instruments, Satellite Communication, Microwave Guidance and Navigation

EnvironmentalOperating Temperature:-55~+85°C

Storaging Temperature:-55~+125°C

CW Power:≤3W ElectricalFrequency:2~20GHz

Insertion≤1dB Wave≤1dB

VSWR:1.6 Impedance:50ΩNotes1. Au bonding ribbon width=160um, thickness=12.5um, as short as possible

2. Recommended space between chip and cover:1-3 mm

3. Low temperature assembly technology: 180°CMax

4. The center RF strip line of CPW can be connected directly to the micro strip line of customer

5. Top surface bonded to Ground is helpful for high stop band rejection.

6. Underlay metal: Cova (Recommended) 

SiMF MEMS High-Pass Filter